• Surface passivation properties of HfO2 thin film on n-Type crystalline Si 

      Cheng, Xuemei; Repo, Paivikki; Haug, Halvard; Perros, Alexander Pyymaki; Marstein, Erik Stensrud; Di Sabatino Lundberg, Marisa; Savin, Hele (Journal article, 2017)
      Atomic layer deposited hafnium oxide is shown to provide good surface passivation of low resistivity, n-type crystalline Si wafers after a low temperature anneal. The surface passivation is related to a fixed negative ...